Diodes Incorporated DMT6002LPS-13
MPNDMT6002LPS-13
End of Life
MOSFET N-CH 60V 100A PWRDI5060-8
$1.78Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 100A (Tc) |
| Power dissipation | 2.3W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6555 pF @ 30 V |