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Diodes Incorporated DMT3011LDT-7

Diodes Incorporated DMT3011LDT-7

MPNDMT3011LDT-7
End of Life

MOSFET 2N-CH 30V 8A/10.7A 8VDFN

$0.89Ref. price · indicative, final on quote
Packaging8-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT3011LDT-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C8A, 10.7A
Power - max1.9W
Operating temperature-55°C ~ 155°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Asymmetrical
Case8-VDFN Exposed Pad
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs13.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds641pF @ 15V