Skip to main content
Diodes Incorporated DMT3009LDT-7

Diodes Incorporated DMT3009LDT-7

MPNDMT3009LDT-7
End of Life

MOSFET 2N-CH 30V 30A V-DFN3030-8

$0.93Ref. price · indicative, final on quote
Packaging8-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT3009LDT-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C30A
Power - max1.2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Asymmetrical
Case8-VDFN Exposed Pad
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11.1mOhm @ 14.4A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 15V
Input capacitance (Ciss) (Max) @ vds1500pF @ 15V