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Diodes Incorporated DMT2004UFDF-7

Diodes Incorporated DMT2004UFDF-7

MPNDMT2004UFDF-7
End of Life

MOSFET N-CH 24V 14.1A 6UDFN

$0.65Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT2004UFDF-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C14.1A (Ta)
Power dissipation800mW (Ta), 12.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1.45V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs53.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1683 pF @ 15 V