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Diodes Incorporated DMT15H017LPS-13

Diodes Incorporated DMT15H017LPS-13

MPNDMT15H017LPS-13
End of Life

MOSFET BVDSS: 101V~250V POWERDI5

$1.65Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT15H017LPS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.4A (Ta), 58A (Tc)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2.6V @ 250µA
Rds on (Max) @ id, vgs17.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3369 pF @ 75 V