Diodes Incorporated DMT10H010LSS-13
MPNDMT10H010LSS-13
End of Life
MOSFET N-CH 100V 11.5A/29.5A 8SO
$1.42Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 11.5A (Ta), 29.5A (Tc) |
| Power dissipation | 1.4W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.8V @ 250µA |
| Rds on (Max) @ id, vgs | 9.5mOhm @ 13A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3000 pF @ 50 V |