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Diodes Incorporated DMP45H4D9HK3-13 — Discrete Semiconductors

Diodes Incorporated DMP45H4D9HK3-13

MPNDMP45H4D9HK3-13
Active

MOSFET P-CH 450V 4.7A TO252

$0.8400Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP45H4D9HK3-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage450 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.7A (Tc)
Power dissipation104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs4.9Ohm @ 1.05A, 10V
Gate charge (Qg) (Max) @ vgs13.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds564 pF @ 25 V