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Diodes Incorporated DMP45H21DHE-13 — Discrete Semiconductors

Diodes Incorporated DMP45H21DHE-13

MPNDMP45H21DHE-13
Active
$0.6200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP45H21DHE-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage450 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C600mA (Tc)
Power dissipation12.5W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs21Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs4.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1003 pF @ 25 V