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Diodes Incorporated DMP1100UCB4-7 — Discrete Semiconductors

Diodes Incorporated DMP1100UCB4-7

MPNDMP1100UCB4-7
Active

MOSFET P-CH 12V 2.5A WLB0808

$0.4200Ref. price · indicative, final on quote
Packaging4-XFBGA, WLBGA
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP1100UCB4-7 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.3V, 4.5V
Current - continuous drain (Id) @ 25°C2.5A (Ta)
Power dissipation670mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case4-XFBGA, WLBGA
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs83mOhm @ 3A, 4.5V
Gate charge (Qg) (Max) @ vgs14 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds820 pF @ 6 V