Diodes Incorporated DMP10H400SEQ-13
MPNDMP10H400SEQ-13
Active
MOSFET P-CH 100V 2.3A/6A SOT223
$0.7000Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.3A (Ta), 6A (Tc) |
| Power dissipation | 2W (Ta), 13.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 250mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1239 pF @ 25 V |