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Diodes Incorporated DMP1011UCB9-7 — Discrete Semiconductors

Diodes Incorporated DMP1011UCB9-7

MPNDMP1011UCB9-7
Active

MOSFET P-CH 8V 10A U-WLB1515-9

$0.8400Ref. price · indicative, final on quote
Packaging9-UFBGA, WLBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP1011UCB9-7 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation890mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs-6V
TechnologyMOSFET (Metal Oxide)
Case9-UFBGA, WLBGA
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1060 pF @ 4 V