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Diodes Incorporated DMNH6021SPSW-13 — Discrete Semiconductors

Diodes Incorporated DMNH6021SPSW-13

MPNDMNH6021SPSW-13
Active
$0.3627Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH6021SPSW-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C44A (Tc)
Power dissipation1.6W
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs20.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1132 pF @ 30 V