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Diodes Incorporated DMNH6012LK3-13 — Discrete Semiconductors

Diodes Incorporated DMNH6012LK3-13

MPNDMNH6012LK3-13
Active
$0.5171Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH6012LK3-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation2W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs35.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1926 pF @ 30 V