Skip to main content
Diodes Incorporated DMNH6008SCTQ — Discrete Semiconductors

Diodes Incorporated DMNH6008SCTQ

MPNDMNH6008SCTQ
Active

MOSFET N-CH 60V 130A TO220AB

$1.9500Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH6008SCTQ specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation210W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2596 pF @ 30 V