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Diodes Incorporated DMNH45M7SCT — Discrete Semiconductors

Diodes Incorporated DMNH45M7SCT

MPNDMNH45M7SCT
Active
$1.8300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH45M7SCT specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C220A (Tc)
Power dissipation240W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs64.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4043 pF @ 20 V