Skip to main content
Diodes Incorporated DMNH4011SPSQ-13 — Discrete Semiconductors

Diodes Incorporated DMNH4011SPSQ-13

MPNDMNH4011SPSQ-13
Active

MOSFET N-CH 40V PWRDI5060

$0.9800Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH4011SPSQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12.9A (Ta), 100A (Tc)
Power dissipation2.5W (Ta), 150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs25.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1405 pF @ 20 V