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Diodes Incorporated DMNH15H110SK3-13 — Discrete Semiconductors

Diodes Incorporated DMNH15H110SK3-13

MPNDMNH15H110SK3-13
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMNH15H110SK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation2W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs97mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs25.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds987 pF @ 75 V