Diodes Incorporated DMNH10H021SPSW-13
MPNDMNH10H021SPSW-13
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$0.7166Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 58A (Tc) |
| Power dissipation | 1.8W |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 28mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3789 pF @ 50 V |