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Diodes Incorporated DMN67D8LT-13 — Discrete Semiconductors

Diodes Incorporated DMN67D8LT-13

MPNDMN67D8LT-13
Active
$0.0481Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN67D8LT-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C210mA (Ta)
Power dissipation260mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs821 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds22 pF @ 25 V