Skip to main content
Diodes Incorporated DMN66D0LDWQ-7 — Discrete Semiconductors

Diodes Incorporated DMN66D0LDWQ-7

MPNDMN66D0LDWQ-7
Active
$0.0710Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN66D0LDWQ-7 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C115mA (Tc)
Power - max400mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 115mA, 5V
Gate charge (Qg) (Max) @ vgs0.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds29.3pF @ 25V