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Diodes Incorporated DMN66D0LDWQ-13 — Discrete Semiconductors

Diodes Incorporated DMN66D0LDWQ-13

MPNDMN66D0LDWQ-13
Active
$0.0505Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN66D0LDWQ-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C217mA (Ta)
Power - max400mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs6Ohm @ 115mA, 5V
Gate charge (Qg) (Max) @ vgs0.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds29.3pF @ 25V