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Diodes Incorporated DMN65D8LW-7 — Discrete Semiconductors

Diodes Incorporated DMN65D8LW-7

MPNDMN65D8LW-7
Active

MOSFET N-CH 60V 300MA SOT323

$0.4900Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN65D8LW-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation300mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 115mA, 10V
Gate charge (Qg) (Max) @ vgs0.87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds22 pF @ 25 V