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Diodes Incorporated DMN65D8LFB-7 — Discrete Semiconductors

Diodes Incorporated DMN65D8LFB-7

MPNDMN65D8LFB-7
Active

MOSFET N-CH 60V 260MA 3DFN

$0.3400Ref. price · indicative, final on quote
Packaging3-UFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN65D8LFB-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C260mA (Ta)
Power dissipation430mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-UFDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 115mA, 10V
Input capacitance (Ciss) (Max) @ vds25 pF @ 25 V