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Diodes Incorporated DMN63D8LDWQ-7 — Discrete Semiconductors

Diodes Incorporated DMN63D8LDWQ-7

MPNDMN63D8LDWQ-7
NRND
$0.3900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN63D8LDWQ-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C220mA
Power - max300mW
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs2.8Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs0.87nC @ 10V
Input capacitance (Ciss) (Max) @ vds22pF @ 25V