Diodes Incorporated DMN63D1LW-7
MPNDMN63D1LW-7
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$0.0534Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 380mA (Ta) |
| Power dissipation | 310mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-70, SOT-323 |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 2Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 0.3 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 30 pF @ 25 V |