Skip to main content
Diodes Incorporated DMN63D1LT-13 — Discrete Semiconductors

Diodes Incorporated DMN63D1LT-13

MPNDMN63D1LT-13
Active

MOSFET N-CH 60V 320MA SOT523

$0.5200Ref. price · indicative, final on quote
PackagingSOT-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN63D1LT-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C320mA (Ta)
Power dissipation330mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs2Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs392 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds30 pF @ 25 V