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DMN63D1LDW-7

Diodes Incorporated DMN63D1LDW-7

MPNDMN63D1LDW-7
Active
$0.0882Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN63D1LDW-7 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C250mA
Power - max310mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs2Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds30pF @ 25V