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Diodes Incorporated DMN62D1LFDQ-7 — Discrete Semiconductors

Diodes Incorporated DMN62D1LFDQ-7

MPNDMN62D1LFDQ-7
Active
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN62D1LFDQ-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)1.5V, 4V
Current - continuous drain (Id) @ 25°C400mA (Ta)
Power dissipation500mW
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case3-PowerUDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 100mA, 4V
Gate charge (Qg) (Max) @ vgs0.55 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds36 pF @ 25 V