Skip to main content
Diodes Incorporated DMN62D0UV-13 — Discrete Semiconductors

Diodes Incorporated DMN62D0UV-13

MPNDMN62D0UV-13
Active
$0.0616Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN62D0UV-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C490mA (Ta)
Power - max470mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds32pF @ 30V