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Diodes Incorporated DMN61D9UDW-13 — Discrete Semiconductors

Diodes Incorporated DMN61D9UDW-13

MPNDMN61D9UDW-13
Obsolete
$0.3700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN61D9UDW-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C350mA
Power - max320mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 50mA, 5V
Gate charge (Qg) (Max) @ vgs0.4nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds28.5pF @ 30V