Diodes Incorporated DMN61D8LVTQ-13
MPNDMN61D8LVTQ-13
End of Life
$0.1476Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 630mA |
| Power - max | 820mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Manufacturer | Diodes Incorporated |
| Configuration | 2 N-Channel (Dual) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 1.8Ohm @ 150mA, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.74nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 12.9pF @ 12V |