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DMN61D8LVT-7

Diodes Incorporated DMN61D8LVT-7

MPNDMN61D8LVT-7
Active

MOSFET 2N-CH 60V 0.63A TSOT26

$0.5200Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN61D8LVT-7 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C630mA
Power - max820mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs1.8Ohm @ 150mA, 5V
Gate charge (Qg) (Max) @ vgs0.74nC @ 5V
Input capacitance (Ciss) (Max) @ vds12.9pF @ 12V