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Diodes Incorporated DMN61D8L-7 — Discrete Semiconductors

Diodes Incorporated DMN61D8L-7

MPNDMN61D8L-7
Active

MOSFET N-CH 60V 470MA SOT23

$0.4000Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN61D8L-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)3V, 5V
Current - continuous drain (Id) @ 25°C470mA (Ta)
Power dissipation390mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs1.8Ohm @ 150mA, 5V
Gate charge (Qg) (Max) @ vgs0.74 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds12.9 pF @ 12 V