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Diodes Incorporated DMN6069SFVW-13 — Discrete Semiconductors

Diodes Incorporated DMN6069SFVW-13

MPNDMN6069SFVW-13
Active
$0.1979Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN6069SFVW-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4A (Ta), 14A (Tc)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs69mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds740 pF @ 30 V