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Diodes Incorporated DMN6069SFGQ-7 — Discrete Semiconductors

Diodes Incorporated DMN6069SFGQ-7

MPNDMN6069SFGQ-7
Active
$0.2899Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN6069SFGQ-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation2.4W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 30 V