Diodes Incorporated DMN6069SE-13
MPNDMN6069SE-13
Active
MOSFET N-CH 60V 4.3A/10A SOT223
$0.5200Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.3A (Ta), 10A (Tc) |
| Power dissipation | 2.2W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 69mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 825 pF @ 30 V |