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Diodes Incorporated DMN6010SCTBQ-13 — Discrete Semiconductors

Diodes Incorporated DMN6010SCTBQ-13

MPNDMN6010SCTBQ-13
Active
$1.6228Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN6010SCTBQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C128A (Tc)
Power dissipation5W (Ta), 312W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs10mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2692 pF @ 25 V