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Diodes Incorporated DMN5L06DW-7 — Discrete Semiconductors

Diodes Incorporated DMN5L06DW-7

MPNDMN5L06DW-7
Obsolete
$0.4200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN5L06DW-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage50V
Current - continuous drain (Id) @ 25°C280mA
Power - max200mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs3Ohm @ 200mA, 2.7V
Input capacitance (Ciss) (Max) @ vds50pF @ 25V