Diodes Incorporated DMN55D0UT-7
MPNDMN55D0UT-7
Obsolete
$0.3500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 50 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 160mA (Ta) |
| Power dissipation | 200mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-523 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 4Ohm @ 100mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 25 pF @ 10 V |