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Diodes Incorporated DMN53D0LDWQ-13 — Discrete Semiconductors

Diodes Incorporated DMN53D0LDWQ-13

MPNDMN53D0LDWQ-13
Active
$0.0973Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN53D0LDWQ-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage50V
Current - continuous drain (Id) @ 25°C460mA (Ta)
Power - max400mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs1.6Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs1.4nC @ 10V
Input capacitance (Ciss) (Max) @ vds49.5pF @ 25V