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Diodes Incorporated DMN52D0LT-13 — Discrete Semiconductors

Diodes Incorporated DMN52D0LT-13

MPNDMN52D0LT-13
Active

MOSFET BVDSS: 41V~60V SOT523 T&R

$0.3800Ref. price · indicative, final on quote
PackagingSOT-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN52D0LT-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)1.8V, 5V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 50mA, 5V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds40 pF @ 25 V