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Diodes Incorporated DMN3731U-13 — Discrete Semiconductors

Diodes Incorporated DMN3731U-13

MPNDMN3731U-13
Active

MOSFET N-CH 30V 900MA SOT23

$0.2500Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3731U-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C900mA (Ta)
Power dissipation400mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs460mOhm @ 200mA, 4.5V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds73 pF @ 25 V