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Diodes Incorporated DMN3730UFB4-7 — Discrete Semiconductors

Diodes Incorporated DMN3730UFB4-7

MPNDMN3730UFB4-7
Active
$0.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3730UFB4-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C750mA (Ta)
Power dissipation470mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs460mOhm @ 200mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds64.3 pF @ 25 V