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Diodes Incorporated DMN33D9LV-13 — Discrete Semiconductors

Diodes Incorporated DMN33D9LV-13

MPNDMN33D9LV-13
End of Life
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN33D9LV-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power - max430mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
ManufacturerDiodes Incorporated
Configuration2 N-Channel (Dual)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1.4V @ 100µA
Rds on (Max) @ id, vgs2.4Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs1.23nC @ 10V
Input capacitance (Ciss) (Max) @ vds48pF @ 5V