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Diodes Incorporated DMN33D8LTQ-13 — Discrete Semiconductors

Diodes Incorporated DMN33D8LTQ-13

MPNDMN33D8LTQ-13
Active
$0.0717Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN33D8LTQ-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C115mA (Ta)
Power dissipation240mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs5Ohm @ 10mA, 4V
Gate charge (Qg) (Max) @ vgs0.55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds48 pF @ 5 V