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Diodes Incorporated DMN33D8LDWQ-13 — Discrete Semiconductors

Diodes Incorporated DMN33D8LDWQ-13

MPNDMN33D8LDWQ-13
Active
$0.0704Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN33D8LDWQ-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C250mA (Ta)
Power - max350mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs2.4Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs1.23nC @ 10V
Input capacitance (Ciss) (Max) @ vds48pF @ 5V