DMN33D8LDW-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.25A

Diodes Incorporated DMN33D8LDW-7
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN33D8LDW-7 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C250mA
Power - max350mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs2.4Ohm @ 250mA, 10V
Gate charge (Qg) (Max) @ vgs1.23nC @ 10V
Input capacitance (Ciss) (Max) @ vds48pF @ 5V
DMN33D8LDW-7
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