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Diodes Incorporated DMN32D0LVQ-13 — Discrete Semiconductors

Diodes Incorporated DMN32D0LVQ-13

MPNDMN32D0LVQ-13
Active
$0.0688Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN32D0LVQ-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C680mA (Ta)
Power - max480mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Configuration2 N-Channel
QualificationAEC-Q101
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 4V
Gate charge (Qg) (Max) @ vgs0.62nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds44.8pF @ 15V