DMN32D0LFB4-7B

Diodes Incorporated

Diodes Incorporated DMN32D0LFB4-7B
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN32D0LFB4-7B specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.8V, 2.5V, 4.5V
Current - continuous drain (Id) @ 25°C440mA (Ta)
Power dissipation350mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 4V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds44.8 pF @ 15 V
DMN32D0LFB4-7B
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