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Diodes Incorporated DMN3200U-7 — Discrete Semiconductors

DMN3200U-7 N-Ch MOSFET 30V 2.2A SOT-23 — Diodes | ICBOMS

MPNDMN3200U-7
Active

MOSFET N-CH 30V 2.2A SOT23-3

$0.4600Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3200U-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.2A (Ta)
Power dissipation650mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 2.2A, 4.5V
Input capacitance (Ciss) (Max) @ vds290 pF @ 10 V